Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure

Authors:	Vadizadeh Mahdi Fallahnejad Mohammad Shaveisi Maryam Ejlali Reyhaneh Bajelan Farshad

Affiliation:	1.Department of Electrical Engineering, Abhar Branch, Islamic Azad University, Abhar, Iran ;2.Department of Electrical Engineering, Central Tehran Branch, Islamic Azad University, Tehran, Iran ;3.Department of Electrical Engineering, Kermanshah University of Technology, Kermanshah, Iran ;

Abstract:

Keywords:
本文献已被 SpringerLink 等数据库收录！