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Performance Assessment of a New Radiation Microsensor Based 4H-SiC trench MOSFET: A Simulation Study |
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| Authors: | Madan Jaya Tamersit Khalil Sharma Kulbhushan Kumar Anjan Pandey Rahul |
| Affiliation: | 1.VLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, Punjab, India ;2.Department of Electronics and Telecommunications, Université 8 Mai 1945 Guelma, 24000, Guelma, Algeria ;3.Department of Electrical and Automatic Engineering, Université 8 Mai 1945 Guelma, 24000, Guelma, Algeria ;4.Laboratory of Inverse Problems, Modeling, Information and Systems (PIMIS), Université 8 Mai 1945 Guelma, 24000, Guelma, Algeria ;5.VLSI Research Centre, GLA University, Mathura, 281406, India ; |
| Abstract: | Silicon - The MOSFET has been widely used as a detector for high-energy radiations in areas like nuclear energy and medical treatments. Generally, the shift in threshold voltage of the... |
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