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Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET |
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| Authors: | Kumar Kaushal Kumar Ajay Mishra Varun Sharma Subhash Chandra |
| Affiliation: | 1.Microelectronics and VLSI Lab, Electronics and Computer Discipline DPT, IIT Roorkee, Roorkee, Uttarakhand, India ;2.Jaypee Institute of Information Technology, Noida, Uttar Pradesh, India ;3.Graphic Era Deemed to be University, Dehradun, Uttarakhand, India ; |
| Abstract: | Silicon - This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch) interface using a new semiconductor compound (SiGe/ InAs) and bimaterial oxide (HfO2/SiO2)... |
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