Light-Harvesting in <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Silicon Heterojunctions |
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Authors: | L Li C X Shan B H Li B Yao D Z Shen B Chu Y M Lu |
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Affiliation: | (1) Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, 700 032, India; |
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Abstract: | Zinc oxide (ZnO) films were deposited onto Si to form n-ZnO/p-Si heterojunctions. Under the illumination of by both ultraviolet (UV) light and sunlight, obvious photovoltaic behavior
was observed. It was found that the conversion efficiency of the heterojunctions increased significantly with increasing thickness
of the ZnO film, and the mechanism for light-harvesting in the heterojunctions is discussed. The results suggest that ZnO
films may be helpful to increasing the harvesting of UV photons, thus decreasing the thermalization loss of UV energy in Si-based
solar cells. |
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Keywords: | |
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