Specific features of the structural state in radiation-resistant structural materials |
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| Authors: | V. P. Kolotushkin S. N. Votinov S. A. Nikulin |
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| Affiliation: | (1) Rubicon Technology, Franklin Park, IL, USA;(2) Scientific Technological Complex, Institute for Single Crystals, Kharkov, Ukraine;(3) Gavish, Ltd., Sapphire Products, Omer, Israel; |
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| Abstract: | The factors of accelerating the recombination of vacancies and interstitial atoms in the structure of structural materials during irradiation are considered. The efficiencies of the effects of the distortion factors induced by substitutional and interstitial atoms and short-range ordering in a crystal lattice on the recombination of point defects are estimated and compared. |
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