Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry |
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Authors: | Yi-Sheng Ting Chii-Chang Chen Jinn-Kong Sheu Gou-Chung Chi Jung-Tsung Hsu |
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Affiliation: | (1) Department of Physics, National Central University, 320 Jung-Li, Taiwan;(2) Institute of Optical Sciences, National Central University, USA;(3) Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute, 310 Chutung, Hsinchu, Taiwan |
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Abstract: | We propose a novel method to analyze the current-voltage (I-V) characteristics of GaN-based light-emitting diodes (LEDs) with
different p-type electrodemesa geometries. The electrical efficiency is analyzed by calculating the electric field under the
quasi-coplanar electrodes of GaN-based LEDs. The experimental results for GaN-based LEDs of chip sizes of 350×350 μm2 and 1,000 × 1,000 μm2 with interdigitated fingers are compared. A good agreement is obtained between the experimental and theoretical electrical
efficiency of the GaN LEDs with a chip size of 1,000×1,000 μm2. The current-crowding effect is analyzed by measuring the electroluminescence spectra of the devices. The result indicates
that the current-crowding effect is largely reduced by increasing the number of interdigitated fingers. The electrical efficiency
of a LED with a chip size of 1,000×1,000 μm2 can be also enhanced by increasing the number of interdigitated fingers, showing the advantages of GaN LED with interdigitated-mesa
geometries. |
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Keywords: | GaN-based LEDs integrated-mesa geometry efficiency |
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