Optical properties of strained layer (111)B Al0.15Ga0.85As-In0.04Ga0.96as quantum well heterostructures |
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| Authors: | T S Moise L J Guido J C Beggy T J Cunningham S Seshadri R C Barker |
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| Affiliation: | (1) Center for Microelectronics Materials and Structures, Yale University, Yale Station, P.O. Box 2157, 06520 New Haven, CT |
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| Abstract: | Data presented here demonstrate that strained-layer (111)B Al0.15Ga0.85As-In0.04Ga0.96As quantum wells exhibit unique optical properties when compared to otherwise identical (100) oriented strained layers. Photoluminescence
measurements identify a strain-induced electric field of order 6.7 Vμm-1 within the (111)B quantum well that is not present for the (100) case. Photoluminescence excitation spectroscopy measurements
show that the heavy-hole to light-hole energy band splitting is approximately 7 meV larger for the (111)B structure than for
the (100) structure.
Howard Hughes Doctoral Fellow |
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| Keywords: | AlGaAs/InGaAs optical properties quantum wells |
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