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标准硅片厚度测量装置的研制
引用本文:傅云霞,曾燕华,祝逸庆.标准硅片厚度测量装置的研制[J].计量学报,2009,30(Z1).
作者姓名:傅云霞  曾燕华  祝逸庆
作者单位:上海市计量测试技术研究院,上海,201203
摘    要:利用电感测微仪的高分辨率和红宝石工作台的高灵敏度,在对传感器进行非线性修正的基础上,提出了垂直于标准硅片表面方向的点对点测量方法,研制了标准硅片厚度测量装置.整套装置适用于直径不大于305 mm标准硅片的厚度校准,对不同的直径和厚度的标准硅片,测量不确定度达到0.2μm.通过对不同厚度的标准硅片进行测量和比对,验证了装置的测量不确定度,具有结构紧凑、操作简便、准确度高、可靠性好的特点,实现了标准硅片厚度的量值溯源.

关 键 词:计量学  标准硅片  厚度测量  点对点测量  非线性补偿

The Device for Measuring the Thickness of Standard Silicon Wafer
FU Yun-xia,ZENG Yan-hua,ZHU Yi-qing.The Device for Measuring the Thickness of Standard Silicon Wafer[J].Acta Metrologica Sinica,2009,30(Z1).
Authors:FU Yun-xia  ZENG Yan-hua  ZHU Yi-qing
Abstract:It is described to use high solution of inductance micrometer and the sensitivity of the operation platform which has a ruby ball in the center. On the basis of nolinear compensation, the thickness of standard silicon wafer is calibrated and measured in vertical direction of surface of silicon wafer from point to point. For the silicon wafers of diameter is less equal 305 mm, the uncertainty of measuring thickness is 0. 2μm. Different thickness measurement and comparison was carried out to verify the uncertainty. It is compact, convenient for operation, and reliable. It can guarantee the tracebility of that of the product of the eletronics and semiconductor enterprises.
Keywords:Metrology  Silicon wafer  Thichness measurement  Measuring from point to point  Nolinear compensation
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