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真空压力浸渗法制备SiCp/Al的研究
引用本文:俞剑,喻学斌.真空压力浸渗法制备SiCp/Al的研究[J].材料科学与工艺,1995,3(4):6-10.
作者姓名:俞剑  喻学斌
作者单位:上海交通大学
摘    要:用真空压力浸渗法制备了SiCp/Al复合材料,研究表明,这种工艺的优点是制备的SiP/Al复合材料颗粒含量高,热膨胀系数低且可调整,如能提供精密模具,该工艺对于开发SiP/Al复合材料作为一析兴电子封装材料是极具竞争力的。研究还发现,将真空压力浸渗法制备的颗粒含量的复合材料过重熔稀释可制成颗粒含量适中、气孔率低、无氧化夹杂和界面反应的最终复合材料,与复合铸造法制备的同样材料相比,这种材料具有低的气

关 键 词:碳化硅    电子封装材料  复合材料

Fabrication of Al-SiCp Composites By Vacuum-high Pressure Infiltration Method
Yu Jian,Yu Xuebin,Zhang Guoding.Fabrication of Al-SiCp Composites By Vacuum-high Pressure Infiltration Method[J].Materials Science and Technology,1995,3(4):6-10.
Authors:Yu Jian  Yu Xuebin  Zhang Guoding
Affiliation:Shanghai Jiao Tong University
Abstract:The fabrication of Al-SiCp composites by vaccum-high pressure infiltration method has been conducted.It was found that by suing this method, a low and adjustable CTE can be obtained. If precision molds are provided, this technique would appear to be a very competitive process for developing Al-SiCp composites as one kind of new electronic packaging materials. It is also found that the high volume fraction Al-SiCp composites can then be diluted into composites with moderate volume fraction of reinforcement. The resulting composites have low porosity, no oxide inclusion and interfacial reaction.Compared with those produced by compocasting method,the Al-SiCp composites made by our method have lower porosity and higher tensile strength.
Keywords:Silicon carbide  aluminum  electronic packaging materials  CTE  dilute  
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