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Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system |
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| Authors: | J Pamulapati P K Bhattacharya J Singh P R Berger C W Snyder B G Orr R L Tober |
| Affiliation: | (1) Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 48109-2122 Ann Arbor, MI;(2) Harrison M. Randall Laboratory of Physics, University of Michigan, 48109-1120 Ann Arbor, MI;(3) U.S. Army Laboratory Command, Army Research Laboratories, 2800 Powder Mill Road, 20783-1197 Adelphi, MD;(4) Present address: U.S. Army Electronics Technology and Device Laboratory, 07703-500 Fort Monmouth, NJ;(5) Present address: Department of Electrical Engineering, University of Delaware, 19716-3130 Newark, DE;(6) Present address: AT &T Bell Laboratories, 07974 Murray Hill, NJ |
| Abstract: | We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change from a layer-by-layer to a three-dimensional (3-D) island mode. Both in-situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1-xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possibly confined in lower dimensions. |
| Keywords: | InGaAs/GaAs reflection high energy electron diffraction (RHEED) scanning tunneling microscopy (STM) strained layer growth |
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