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(111)-Oriented Pb(Zr0.52Ti0.48)O3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition |
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| Authors: | M. Khodaei S. A. Seyyed Ebrahimi Yong Jun Park Seungwoo Song Hyun Myung Jang Junwoo Son Sunggi Baik |
| Affiliation: | 1. Center of Excellence for Magnetic Materials, School of Metallurgy and Materials, University of Tehran, Tehran, Iran 2. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea 3. Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea 4. Division of Advanced Materials Science (AMS), Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea |
| Abstract: | Perovskite Pb(Zr0.52Ti0.48)O3 (PZT) thin film with perfect (111)-orientation was achieved on CoFe2O4 seeded-Pt(111)/Ti/SiO2/Si substrate by pulsed laser deposition technique using target with limited excess Pb. Pyrochlore phase formation was suppressed on Pt by CoFe2O4 nano-seed layer (~7 nm), and perovskite PZT was achieved at temperature as low as 550 °C. CoFe2O4 seed layer that has perfect (111)-orientation acts as a promoter for perfectly (111)-orientated growth of PZT. PZT film grown at 600 °C has higher degree of crystalline orientation, lower surface roughness, and compacted microstructure in comparison to the film grown at 550 °C. The PZT film has a nano-size grain-feature structure with grain size of about 40–60 nm. Perovskite formation was also confirmed by ferroelectric measurement. The ferroelectric properties of PZT film grown at 600 °C is higher than that grown at 550 °C which could be attributed to the enhancement of the crystalline orientation, crystallinity, and microstructure of the film. |
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