| 100 nm P型超浅结制作工艺研究 |
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| 引用本文： | 鲜文佳,刘玉奎.100 nm P型超浅结制作工艺研究[J].微电子学,2010,40(1). |
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| 作者姓名： | 鲜文佳 刘玉奎 |
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| 作者单位： | 1. 重庆大学,光电工程学院,重庆,400044;模拟集成电路国家级重点实验室,重庆,400060
2. 模拟集成电路国家级重点实验室,重庆,400060;中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 介绍了一种P型超浅结的制作工艺。该工艺通过F离子注入和快速热退火技术相结合,获得了比较先进的100nm以内的P型超浅结;重点研究了影响超浅结形成的沟道效应和瞬态增强扩散效应;详细介绍了制作过程中对沟道效应和瞬态增强扩散效应的抑制。
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| 关 键 词： | 超浅结 离子注入 快速热退火 沟道效应 瞬态增强扩散效应 |
Study on P-Type Ultra-Shallow Junction Process Using F Implantation and Rapid Thermal Annealing |
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| XIAN Wenjia,LIU Yukui.Study on P-Type Ultra-Shallow Junction Process Using F Implantation and Rapid Thermal Annealing[J].Microelectronics,2010,40(1). |
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| Authors: | XIAN Wenjia LIU Yukui |
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| Affiliation: | 1.College of Opto-Electronic Engineering/a>;Chongqing University/a>;Chongqing 400044/a>;P.R.China/a>;2.National Laboratory of Analog IC's/a>;Chongqing 400060/a>;3.Sichuan Institute of Solid State Circuits/a>;CETC/a>;P.R.China |
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| Abstract: | Fabrication of P-type ultra-shallow junction was presented.By using F ion implantation and rapid thermal annealing (RTA),a P-type ultra-shallow junction below 100 nm was obtained.Channeling effect and transient enhanced diffusion (TED) effect,which affect the formation of ultra-shallow junction,were studied in particular.Furthermore,the inhibition of the two effects,which was very important in the process,was also discussed. |
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| Keywords: | Ultra-shallow junction Ion implantation Rapid thermal annealing Channeling effect Transient enhancement diffusion effect |
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