| 大束流离子注入形成CoSi2/Si肖特基结电学特性 |
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| 引用本文： | 张浩,李英,王燕,田立林. 大束流离子注入形成CoSi2/Si肖特基结电学特性[J]. 固体电子学研究与进展, 2005, 25(2): 265-268 |
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| 作者姓名： | 张浩 李英 王燕 田立林 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084 |
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| 摘 要： | 文中研究了使用大束流金属离子注入形成的CoSi2/Si肖特基结的特性。肖特基结由离子注入和快速热退火两步工艺形成。Co离子注入剂量为3×1017ion/cm2,注入电压25kV。快速热退火温度为850°C,时间为1min。应用I-V和C-V测量进行参数提取。I-V分析得到势垒高度约为0.64eV,理想因子为1.11,C-V分析得到势垒为0.72eV。最后依据实验结果对工艺提出了改进意见。
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| 关 键 词： | 肖特基结 势垒高度 电流-电压特性 电容-电压特性 |
| 文章编号： | 1000-3819(2005)02-265-04 |
| 修稿时间： | 2003-03-10 |
Electronic Characteristics of CoSi2/Si Schottky Junction Formed by High Flux Metal Ion Implantation |
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| ZHANG Hao,LI Ying,WANG Yan,Tian Lilin. Electronic Characteristics of CoSi2/Si Schottky Junction Formed by High Flux Metal Ion Implantation[J]. Research & Progress of Solid State Electronics, 2005, 25(2): 265-268 |
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| Authors: | ZHANG Hao LI Ying WANG Yan Tian Lilin |
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| Abstract: | We present a study of CoSi_2/Si Schotky Junction formed by metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. The Co implanting dose is 3×10~17 ion/cm2 followed by rapid thermal annealing(RTA) at 850°C for 1 minute. I-V results show that barrier height is 0.64 eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72 eV. Improvements for this new process are provided. |
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| Keywords: | Schottky junction barrier height I-V characteristic C-V characteristic |
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