| Al掺杂4H-SiC同质外延的缓冲层 |
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| 引用本文： | 贾仁需,张义门,张玉明,王悦湖,栾苏珍. Al掺杂4H-SiC同质外延的缓冲层[J]. 固体电子学研究与进展, 2009, 29(2) |
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| 作者姓名： | 贾仁需 张义门 张玉明 王悦湖 栾苏珍 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展计划(973)(,教育部科学技术研究重点项目 |
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| 摘 要： | 利用扫描电子显微镜(SEM)、X射线双晶衍射谱(XRD)和光致发光谱(PL)对在4H-SiC单晶衬底上采用CVD同质外延的4H-SiC单晶薄膜的特性进行研究,发现外延层有很好的晶格结构和完整性。由于Al原位掺杂引起的晶格失配和衬底和外延的晶向偏离,在样品的衬底和外延的界面出现了约1μm的缓冲层,使得XRD摇摆曲线距主峰左侧约41arcs出现了强衍射峰。缓冲层中存在大量的堆垛缺陷和位错,引入缺陷能级,使室温PL测试为"绿带"发光。通过PL全片扫描发现缓冲层在整个样品中普遍存在且分布均匀。
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| 关 键 词： | 4H碳化硅同质外延 缓冲层 扫描电子显微镜 X射线双晶衍射谱 光致发光谱 |
The Buffer Layer of Al-doped 4H-SiC |
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| JIA Renxu,ZHANG Yimen,ZHANG Yuming,WANG Yuehu,LUAN Suzhen. The Buffer Layer of Al-doped 4H-SiC[J]. Research & Progress of Solid State Electronics, 2009, 29(2) |
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| Authors: | JIA Renxu ZHANG Yimen ZHANG Yuming WANG Yuehu LUAN Suzhen |
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| Affiliation: | Key Lab.of Ministry of Education for Wide Band-gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi'an;710071;CHN |
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| Abstract: | Properties of Al-doped 4H-SiC epitaxial layer,grown by CVD on the 4H-SiC were studied using scanning electron microscope(SEM),X-ray diffraction(XRD)and photoluminescence(PL).The results indicate that the 4H-SiC epitaxial layer has a good crystalline structure.The buffer layer at the interface of n-type substrate and p-type epitaxial layer is found by SEM caused by lattice mismatch and lattice misorientation,hence two well-shaped peaks in double-axis rocking curve are found.The room temperature photoluminesc... |
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| Keywords: | 4H-SiC homoepitaxial layers buffer layer SEM XRD PL. |
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