High-power generation in IMPATT devices in the 100-200-GHz range |
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| Authors: | Chen C.-C. Mains R.K. Haddad G.I. |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI; |
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| Abstract: | A silicon double-drift IMPATT diode with high uniform doping levels was simulated. Simulation results show that it is possible for silicon IMPATT diodes to generate extremely high pulsed output power for frequencies above 100 GHz under high current-density operation. The highest output power matched to a 1-Ω load resistance obtained at 150 GHz is 37.7 W with a DC current density of 200 kA/cm2, although the calculated power conversion efficiency is low. It is also shown that the low-power conversion efficiency limits the diode's continuous wave power operation |
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