Highly efficient inverted blue light-emitting diodes by thermal annealing and interfacial modification |
| |
| Affiliation: | 1. Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China;2. Physical Science and Technology College of Yichun University, Yuanzhou, Yichun, 336000, China;1. Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark;2. XMaS, The UK-CRG Beamline, European Synchrotron Radiation Facility, 38043 Grenoble Cedex 09, France;3. Department of Physics, University of Warwick, Gibbet Hill Road, CV4 7AL Coventry, UK;4. NanoSYD, Mads Clausen Institute, University of Southern Denmark, 6400 Sønderborg, Denmark;1. Institute for Clean Energy and Advanced Materials, Faculty of Materials and Energy, Southwest University, Chongqing 400715, PR China;2. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China;3. Key Laboratory of Solid-state Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China;4. School of Physics and Mechanical &Electrical Engineering, Zunyi Normal College, Zunyi 563002, PR China;5. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, PR China;1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, P.za L. da Vinci, 32, 20133, Milano, Italy;2. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133, Milano, Italy;1. Department of Chemistry, Queens University, Kingston, Ontario, Canada;2. Department of Physics, Engineering Physics and Astronomy, Queens University, Kingston, Ontario, Canada;3. Department of Chemistry and Chemical Engineering, Royal Military College, Kingston, Ontario, Canada |
| |
| Abstract: | Inverted polymer light-emitting diodes (IPLED) were fabricated by using polyfluorene (PF-FSO10) as the emissive layer, polyethyleneimine ethoxylate (PEIE) as the interlayer, and 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) as the electron-transport layer with the configuration of ITO/ZnO/PEIE/TPBI/PF-FSO10/MoO3/Al. Thermal annealing PF-FSO10 made the hole transporting ability decreased, the electron transporting ability enhanced, and thus, jointly promoted the carrier balances in the emissive layer. Inserting a TPBI layer between the PEIE and PF-FSO10 much enhanced the electron transportation and reduced the exciton quench on the ZnO interface. Therefore, the inverted blue light-emitting diode was obtained with a luminous efficiency of 6.8 cd A−1 (an external quantum efficiency of 7.1%), and the CIE color coordinates of (0.15, 0.15), which was among the highest efficiency values in solution-processed inverted blue fluorescent light-emitting diodes. |
| |
| Keywords: | Polyfluorene Thermal annealing Interfacial modification Blue emission IPLED |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
