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Characterization of recombination in P3HT:fullerene blends: Clarifying the influence of interfacial states
Affiliation:1. Department of Chemistry, Fu Jen Catholic University, New Taipei City 24205, Taiwan;2. Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan;1. School of Electronics Engineering, College of IT Engineering, Kyungpook National University, 1370 Sankyuk-dong, Bukgu, 702-701 Daegu, Republic of Korea;2. Division of Advanced Research and Development, SINOKOR, 12 Seongseogongdanbuk-ro 43-gil, Dalseo-gu, Daegu 704-920, Republic of Korea;3. Future Industries Institute, Division of Information Technology, Engineering and Environment, University of South Australia, Mawson Lakes 5095, South Australia;4. Division of Computer and Electronic Engineering, Pusan University of Foreign Studies, 65 Namsan-dong, Geumjeong-gu, 608-738 Busan, Republic of Korea;5. Department of Electronic Engineering, Kyungil University, Hayang-up, 712-702 Gyeongsang buk-do, Republic of Korea;1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, United States;2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27607, United States
Abstract:
Keywords:Photoinduced absorption  Bulk-heterojunction  Recombination  ICBA  P3HT  Interfacial dipole
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