Correlation between interlayer thickness and device performance in blue phosphorescent organic light emitting diodes with a quantum well structure |
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| Affiliation: | 1. Department of Information Communication & Display Engineering, Divison of Mechanical and ICT Convergence Engineering, Sun Moon University, 221, Sunmoon-ro, Tangjeong-myeon, Asan, Chungnam, 31460, Republic of Korea;2. Advanced Functional Thin Films Department, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Seongsan-gu, Changwon, 51508, Republic of Korea;3. School of Display and Semiconductor Physics, College of Science and Technology, Korea University Sejong Campus, 2511 Sejong-ro, Sejong City, 30019, Republic of Korea;1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, United States;2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27607, United States;1. Wuhan University, 8 East Lake South Road, Wuchang Dist., Wuhan, 430072, China;2. International and Inter University Centre for Nanoscience and Nanotechnology, School of Chemical Sciences, Mahatma Gandhi University, Priyadarshini Hills P. O. Kottayam, Kerala, 686560, India;3. Liquid Crystal Research Laboratory (LCRL), Bannari Amman Institute of Technology, Sathyamangalam, 638 401, India;1. Engineering Research Centre of Zhengzhou for High Performance Organic Functional Materials, Zhongzhou University, 6 Yingcai Street, Huiji District, Zhengzhou, 450044, China;2. Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, 345 Lingling Road, Shanghai, 200032, China;3. Department of Chemistry, Zhejiang Sci-Tech University, Hangzhou, 310018, China;4. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, China;1. Department of Physics, Ajou University, Suwon 443-749, South Korea;2. Department of Energy Systems Research, Ajou University, Suwon 443-749, South Korea;1. Department of Chemistry Education, Institute of Fusion Science, Div. of Science Education, Chonbuk National University, 567 Baekje-ro, Jeonju 561-756, Republic of Korea;2. Professional Graduate School of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, 567 Baekje-ro, Jeonju 561-756, Republic of Korea;3. Department of Chemistry, Dongguk University-Seoul, Seoul 100-715, Republic of Korea |
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| Abstract: | We systematically examined the effects of interlayer (ITL) thickness variation in an emission layer (EML) on electrical and optical characteristics of blue phosphorescent organic light-emitting diodes. The EML consisted of a quantum well structure using a hole transport material 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) as an ITL. This ITL facilitated the confinement of charge carriers in the recombination zone (RZ), adjusted the charge carrier balance in the EML, and prevented the triplet exciton loss to adjacent transport layers. The thickness variation in the ITL greatly influenced the size and location of the RZ and the exciton density (ED), which is related to charge balance and exciton diffusion in the EML. A micro-cavity effect around 500 nm and the corresponding redshift/blueshift in the electroluminescent spectrum arose from different ITL thicknesses. Remarkably, the device having a 5-nm-thick TAPC ITL showed better current and power efficiencies than those of any other devices because of the rearrangement of the locations of excitons and ED through control of the hole/electron charge density. |
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| Keywords: | Quantum well structure Interlayer Recombination zone Phosphorescent OLEDs Charge balance Exciton density |
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