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Ladder-type silsesquioxane copolymer gate dielectrics for gating solution-processed IGZO field-effect transistors
Affiliation:1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea;2. School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea;3. Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, Republic of Korea;4. SKC Advanced Technology R&D Center, Suwon, Gyeonggi-do, 440-301, Republic of Korea;1. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan;2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;1. University of Pavia, Department of Physics and CNR-INFM ULTRAS, Via Bassi 6, 27100 Pavia, Italy;2. University of Bari, Department of Chemistry, Via Orabona 4, 70126 Bari, Italy;3. Institute of Chemistry of OrganoMetallic Compounds, ICCOM, Italian National Council of Research, CNR, Via Orabona, 4, 70125, Bari, Italy;4. University of Genova, Department of Chemistry and Industrial Chemistry, Via Dodecaneso 31, 16146 Genova, Italy;1. Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;2. Polyimide Department, Daxin Materials Corporation, Taichung 407, Taiwan;3. Department of Greenergy, National University of Tainan, Tainan 700, Taiwan;4. Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
Abstract:
Keywords:Ladder-type poly(phenyl-co-methacryl silsesquioxane)  Gate dielectric  Indium-gallium-zinc oxide  Transistor  Crosslink
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