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CH3NH3PbI3/C60 heterojunction photodetectors with low dark current and high detectivity
Affiliation:1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun, 130022, People''s Republic of China;2. University of Chinese Academy of Sciences, People''s Republic of China;3. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, People''s Republic of China;4. Department of Chemistry, King Saud University, Riyadh, Saudi Arabia;5. Department of Chemistry, College of Science & General Studies, Alfaisal University, Riyadh, Saudi Arabia;6. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia;1. College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China;2. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;3. College of Information Engineering, China Jiliang University, Hangzhou 310018, China;4. Department of Physics, Tianshui Normal University, Tianshui, Gansu 741001, China;1. Nanoptronics Research Center, Iran University of Science and Technology, Iran;2. Nanolab, Malke Ashtar University of Technology, Iran;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, 250100, People''s Republic of China;2. ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria, 3010, Australia;1. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;2. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;3. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, China;4. The State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100190, China
Abstract:CH3NH3PbI3/C60 heterojunction photodetectors were here fabricated. The peak EQE achieves ∼80% in the visible-light range from 400 to 760 nm. Benefitting from eliminating the leakage current (PEDOT:PSS-free), extremely low dark current density (0.6 nA/cm2) and high specific detectivity (2.7 × 1013 Jones) are acquired.
Keywords:Perovskite photodetectors  Low dark current  High detectivity
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