首页 | 本学科首页   官方微博 | 高级检索  
     


Cardanol-based polymeric gate dielectric for solution-processed organic field-effect transistors on flexible substrates
Affiliation:1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 446-701, Republic of Korea;2. Department of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Shilim-9-Dong, Gwanak-Gu, Seoul 151-744, Republic of Korea;3. Interface Material and Chemical Engineering Research Center, Korea Research Institute of Chemical Technology, Daejeon 305-343, Republic of Korea;1. State Key Laboratory of Polymer Physics and Chemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;1. Department of Chemical Engineering, McMaster University, Hamilton, Ontario, L8S 4L7, Canada;2. Xerox Research Centre of Canada, 2660 Speakman Drive, Mississauga, Ontario, L5K 2L1, Canada;3. Department of Chemistry and Chemical Biology, MAX Diffraction Facility, McMaster University, Hamilton, Ontario, L8S 4L8, Canada
Abstract:A cardanol-based polymer, poly(2-hydroxy-3-cardanylpropyl methacrylate) (PHCPM), was utilized as the gate dielectric of an organic field-effect transistor (OFET). PHCPM has good surface properties, appropriate gate dielectric characteristics, and good compatibility with solution-processed semiconducting polymers. The electrical properties of an FET that was prepared with natural resource-based PHCPM as a gate dielectric layer and solution-processed poly[2,5-bis(3-dodecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) as a semiconducting layer were investigated on flexible substrates. The flexible PBTTT-OFET device with the PCHPM gate dielectric exhibited high mobility and reliable performance, even in the bending state, without significant hysteresis.
Keywords:Organic field-effect transistors  Flexible substrate  Gate dielectrics  Cardanol-based polymer  Natural resource-based material
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号