A donor-acceptor structured conjugated copolymer for flexible memory device |
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| Affiliation: | 1. Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China;2. Physical Science and Technology College of Yichun University, Yuanzhou, Yichun, 336000, China;1. Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark;2. XMaS, The UK-CRG Beamline, European Synchrotron Radiation Facility, 38043 Grenoble Cedex 09, France;3. Department of Physics, University of Warwick, Gibbet Hill Road, CV4 7AL Coventry, UK;4. NanoSYD, Mads Clausen Institute, University of Southern Denmark, 6400 Sønderborg, Denmark;1. Institute for Clean Energy and Advanced Materials, Faculty of Materials and Energy, Southwest University, Chongqing 400715, PR China;2. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China;3. Key Laboratory of Solid-state Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China;4. School of Physics and Mechanical &Electrical Engineering, Zunyi Normal College, Zunyi 563002, PR China;5. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, PR China;1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, P.za L. da Vinci, 32, 20133, Milano, Italy;2. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133, Milano, Italy;1. Department of Chemistry, Queens University, Kingston, Ontario, Canada;2. Department of Physics, Engineering Physics and Astronomy, Queens University, Kingston, Ontario, Canada;3. Department of Chemistry and Chemical Engineering, Royal Military College, Kingston, Ontario, Canada |
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| Abstract: | A Donor-Acceptor structured conjugated copolymer PCNCzF was designed and synthesized for flexible polymer memory. The fabricated Al/PCNCzF/ITO-coated PET device exhibited non-volatile WORM memory effect, with the switch-on threshold voltage of −1.4 V, and an ON/OFF current ratio of more than 104. The reliability and mechanical stability of the flexible memory device was deduced from the endurance and bending tests. Theoretical simulation, in-situ fluorescence spectra, as well as C-AFM measurements were employed to evaluate the switching mechanism of the memory device. The present flexible memory device was expected to meet the demand for flexible electronics applications. |
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| Keywords: | Polymer memory Flexible memory device Donor-acceptor polymer Charge transfer |
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