Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon |
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| Affiliation: | 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, PR China;2. School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha, PR China;3. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, PR China;1. Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, D-07743 Jena, Germany;2. Institute of Applied Physics, ABBE Center of Photonics, Friedrich-Schiller-University Jena, Albert-Einstein-Str. 15, D-07745 Jena, Germany;3. OSRAM OLED GmbH, Wernerwerkstr. 2, D-93049 Regensburg, Germany;1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials(IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;2. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China;1. M.V. Lomonosov Moscow State University, 1/3 Leninskye Gory, Moscow, 119991, Russia;2. P.N. Lebedev Physical Institute, Leninsky prosp. 53, Moscow, 119992, Russia;3. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422, Wroclaw, Poland;4. A. N. Nesmeyanov Institute of Organoelement Compounds, 28 Vavilova, 119991, Moscow, Russia;5. SIA Evoled, Puskina iela 1A-24, Riga, LV-1050, Latvia;1. School of Materials Science & Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea;2. Institute for Solar and Sustainable Energies (RISE), Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61002, Republic of Korea;3. Department of Chemistry and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UK;4. Department of Chemical Engineering and Materials Science, University of California-Irvine, Irvine, CA, 92697, United States;1. Department of Forest Products Technology, Aalto University, Finland;2. Department of Applied Physics, Aalto University, Finland;3. Department of Civil and Environmental Engineering, University of California Los Angeles, USA;4. Department of Mechanical Engineering, Aalto University, Finland;1. Department of Physics, Microelectronics and Instrumentation Laboratory, Av de l’environnement, 5019 Monastir, Tunisia;2. CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN, Univ. Lille, 59000, Lille, France |
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| Abstract: | We investigate the transport properties of Schottky contact structure based on zigzag phosphorene nanoribbon (ZPNR) by using the non-equilibrium Green's function formalism with density functional theory. The calculated band structures show the unpassivated ZPNR is metal and the H-passivated ZPNR is semiconductor. The in-plane contact structure of unpassivated ZPNR and H-passivated ZPNR leads to the formation of a Schottky barrier, which results in rectifying current-voltage characteristics. The rectification ratio (RR) can reach to 103 in the bias region from 0.3 V to 0.5 V. By extending the length of H-passivated ZPNR in Schottky contact structure, the currents of the Schottky contact structure are decreased, but the RR can be enlarged obviously. When the length of H-passivated ZPNR is four times than that of the unpassivated ZPNR, the average RR increases to 106 in the bias region from 0.3 V to 0.5 V and the maximal RR is boosted up to 107 at 0.45 V. |
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| Keywords: | Schottky contact structure Phosphorene nanoribbon Nonequilibrium Green's function Density functional theory Rectifying |
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