Electrical and optical analyses of trapping phenomenon with temperature dependence of organic device |
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| Affiliation: | 1. Physics Department, Faculty of Science, Sohag University, Sohag 82524, Egypt;2. Leibniz Institute for Solid State and Materials Research (IFW), PO Box 270016, Dresden D-01171, Germany;1. Key Laboratory of Interface Science and Engineering in Advanced Materials (Ministry of Education), Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China;2. Department of Organic Device Engineering, Graduate School of Science and Engineering, Research Center for Organic Electronics (ROEL), Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan;3. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, China;1. Low Dimensional Materials Research Centre, Physics Department, University Malaya, 50603, Kuala Lumpur, Malaysia;2. Department of Chemical Engineering, Faculty of Engineering, Universitas Indonesia, 16424 Depok, Indonesia;3. School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang, Malaysia;1. Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China;2. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), School of Material Science and Engineering, Nanjing University of Posts & Telecommunications, Nanjing 210023, China;3. Key Laboratory for Organic Electronics & Information Displays (KLOEID), Jiangsu Engineering Centre for Plate Displays & Solid State Lighting, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China |
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| Abstract: | Carrier mechanism in actual organic devices is not simple, owing to the dielectric nature of active organic semiconductor layers, the complexity of the organic device interface, carrier trapping effects by stress biasing, and others. By coupling the conventional electrical measurement, e.g., current–voltage, capacitance–voltage and capacitance-frequency measurements, with optical charge modulation spectroscopy (CMS) measurement, we studied the hysteresis behavior and the temperature dependence of indium tin oxide/polyimide/6,13-Bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene)/Au diodes to understand the effect of carrier trapping caused by injected carriers. The coupled electrical and optical measurements were very helpful to clarify carrier injection that was followed by carrier trapping in the diode, in terms of hysteresis behavior. CMS measurement was used to observe energetic states of carriers in TIPS-pentacene double-layer diode. Finally, the carrier mechanism in organic diodes was discussed by analyzing the diodes as a Maxwell-Wagner effect element. |
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| Keywords: | Trap Hysteresis TIPS-pentacene Maxwell-Wagner model |
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