Controllable memristive patterns in poly(9,9-dioctylfluorene)-based sandwich device |
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| Affiliation: | 1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing, 210023, China;2. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China;1. Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, China;2. Physical Science and Technology College of Yichun University, Yuanzhou, Yichun, 336000, China;1. Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark;2. XMaS, The UK-CRG Beamline, European Synchrotron Radiation Facility, 38043 Grenoble Cedex 09, France;3. Department of Physics, University of Warwick, Gibbet Hill Road, CV4 7AL Coventry, UK;4. NanoSYD, Mads Clausen Institute, University of Southern Denmark, 6400 Sønderborg, Denmark;1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, P.za L. da Vinci, 32, 20133, Milano, Italy;2. Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133, Milano, Italy;1. Institute for Clean Energy and Advanced Materials, Faculty of Materials and Energy, Southwest University, Chongqing 400715, PR China;2. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China;3. Key Laboratory of Solid-state Physics and Devices, School of Physical Science and Technology, Xinjiang University, Urumqi 830046, China;4. School of Physics and Mechanical &Electrical Engineering, Zunyi Normal College, Zunyi 563002, PR China;5. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, PR China |
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| Abstract: | Currently, there are two prevalent types of I-V memristive patterns for memristive applications, 0-type and 8-type hysteresis loop, and their respective characteristics result in their specific applications in different situations, such as data storage and neuromorphic computing. In spite of the abundant achievements of these remarkable performances, scarce works are specially concerned about the relations and regulations between them for persuing the multiple functions in a single element, and an ideal platform with both the achievements and controllable transformations has been rarely reported. Herein, the novel organic material—poly(9,9-dioctylfluorene) (PFO) is utilized to construct the sandwich prototype. The electrical transporting properties are systematically investigated through particular programming protocols. The 0-type and 8-type memristive patterns are successfully obtained during low and high voltage sweeps, respectively. Then the sectionalized fitting results of the current curves, the carrier transporting behaviors as well as the regulations of device energy levels are associatively demonstrated to analyze the electrical activity-dependent transformations between different memristive patterns. More importantly, the appearance of the 8-type hysteresis loop can be regulated by the rectification property, and the rectification can be largely enhanced by the reconfiguration of device energy levels. Consequently, for the versatile memristive device, based on the 0-type hysteresis, it can serve as a data storage or artificial synapse element, and the rectification-modified memristive behaviors can effectively impede the unintended sneak current paths for high-density integration. |
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| Keywords: | Poly(9,9-dioctylfluorene) Memristive Energy level regulation Rectification Versatile sandwich prototype |
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