Highly transparent polyimide/nanocrystalline-zirconium dioxide hybrid materials for organic thin film transistor applications |
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| Affiliation: | 1. Department of Materials Engineering, Ming Chi University of Technology, New Taipei City, 24301, Taiwan;2. Department of Chemical and Materials Engineering, Chang Gung University, Guishan Dist., Taoyuan City, 33302, Taiwan;3. Institute of Organic and Polymeric Materials, National Taipei University of Technology, 10608, Taipei, Taiwan;4. Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, 10608, Taipei, Taiwan;1. School of Material Science & Engineering, Shanghai University, Shanghai 200444, People''s Republic of China;2. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, Zhejiang, People''s Republic of China;3. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People''s Republic of China;4. University of Chinese Academy of Sciences, Beijing 100049, People''s Republic of China;5. Faculty of Maritime and Transportation, Ningbo University, Ningbo 315211, Zhejiang, People''s Republic of China;1. Centre for Nanoscience and Technology, Pondicherry University, Kalapet, Puducherry 605014, India;2. Department of Physics, Pondicherry University, Kalapet, Puducherry 605014, India;3. Materials Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamilnadu 603102, India;1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, China;2. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, China;3. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | A solution-processable high k dielectric materials based on polyimide/zirconium dioxide (PI-ZrO2) for organic thin film transistors (OTFTs) is demonstrated. To study the effect of the ZrO2 content on the properties of the dielectric layer, a series of PZn films (n = 0, 2, 5, 8, 10, 12, and 15, which are the weight percentage of ZrO2 in the film) were prepared. The results showed that all of the prepared hybrid films had a high transmittance of 96–99%. The nondestructive Zr K-edge XANES analysis revealed that the absorption intensity was proportional to the ZrO2 content. EXAFS analysis indicated that the ZrO2 formed bigger clusters in the film than in the solution state. Water and diiodomethane contact angle analysis found that the PZ12 film had the largest contact angles, lowest surface energy, and lowest water absorbance, which results in the least structural defects and highest carrier mobility. Electrical property analysis indicated that the dielectric constant of the films increased from 4.04 for the PZ0 film to 8.10 for the PZ12 film, but then dropped for the PZ15 film. All current leakages (−2 MV/cm) were less than 10−9 A/cm. The carrier mobility in the PZ0 film was 2.78 × 10−1, up to 4.15 × 10−1 for the PZ12 film, but down to 3.34 × 10−1 for the PZ15 film. The Ion/Ioff ratio was 2.3 × 103 for PZ0, up to 1.4 × 105 for PZ12, but down to 1.8 × 104 for PZ15. The hybrid dielectric devices showed better performance. This work reveals great potential for hybrid dielectric materials for OTFT applications. |
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| Keywords: | Polyimide Nanocrystalline zirconium dioxide Hybrid thin films Organic thin film transistors |
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