Starch as ion-based gate dielectric for oxide thin film transistors |
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| Affiliation: | 1. Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, China;2. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China;1. School of Chemical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi, 440-746, South Korea;2. Advanced Materials R&D, LG Chem Research Park, 188, Munji-ro, Yuseong-gu, Daejeon, South Korea;1. Key Laboratory of Organosilicon Chemistry and Material Technology of Ministry of Education, Hangzhou Normal University, Hangzhou, 311121, PR China;2. Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, Shanghai, 200032, PR China;1. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea;2. Chemistry, Imperial College London, London, SW7 2AZ, United Kingdom;3. Department of Materials Engineering and Convergence Technology and ETI, Gyeongsang National University, Jinju, 660-701, Republic of Korea;4. Department of Polymer Science & Engineering and Department of IT Convergence, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea;1. Department of Physics, Umeå University, SE-901 87, Umeå, Sweden;2. Department of Electrical Engineering, Linköping University, SE-581 83, Linköping, Sweden;1. Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, Jilin University, Changchun, 130023, PR China;2. Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, United States;1. College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China;2. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Application of nature bio-materials in electronics represents an emerging field of science and technology that began a few years ago. For the dielectric of transistors, the ion-based electric double layer (EDL) gating has becoming the widely accepted theory of charge modulation with hydrated bio-polymer dielectrics. Herein, we report on the use of starch as the ion-based gate dielectric for oxide thin film transistors. Two types of starches, i.e., water-soluble starch and potato starch were studied either with or without the incorporation of glycerol. Important parameters including mechanical strength, surface morphology, specific capacitance and ion conductivity were analyzed in accordance with the molecular structure of starches. The transistor performance was found in close relation with the specific capacitance and ion conductivity of the starch dielectrics. Higher on/off ratio (2.6 × 106) and field mobility (0.83 cm2V?1s?1) were obtained with glycerol incorporated potato starch due to the advantage in capacitance and ion conductivity. Lower ion conductivity of the water-soluble starch on the other hand caused the large current hysteresis, so the current retention property was examined for the potential application as a memory element. Collectively, this work solidifies our knowledge on the material type, EDL gating mechanism and applicability of nature bio-material gated transistors. |
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| Keywords: | Starch Electric-double-layer Transistor |
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