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Electrical properties of zinc oxide – Tetracene heterostructures with different n-type ZnO films
Affiliation:1. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;2. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine;1. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510641, China;2. Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong Province, 518055, China;1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing JiaoTong University, Beijing 100044, China;2. College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;1. Universität Heidelberg, Institute for Physical Chemistry, D-69120, Heidelberg, Germany;2. Friedrich-Alexander-Universität Erlangen-Nürnberg, Department of Materials Science and Engineering, Martensstr. 7, D-91058, Erlangen, Germany;1. CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN, Univ. Lille, 59000 Lille, France;2. University of Monastir, Department of Physics, Microelectronics and Instrumentation Laboratory, Av de l''environnement, 5019 Monastir, Tunisia;1. Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, 01062 Dresden, Germany;2. Dresden Center for Nanoanalysis, Center for Advanced Electronics Dresden (cfaed), Technische Universität Dresden, 01062 Dresden, Germany;3. Leibniz Institute for Solid State and Material Research Dresden, 01069 Dresden, Germany
Abstract:Electrical properties of organic-inorganic pn heterojunction structures with tetracene (Tc) and zinc oxide (ZnO) films were investigated. The ZnO films had different n-type carrier concentrations that varied from ~1015 cm?3 to 1019 cm?3. Lower n-type ZnO layers resulted in decreased reverse currents in the ZnO:Al/ZnO/Tc/Au structures and in an improvement of their asymmetric properties. Experimentally determined energy level alignments at the ZnO/Tc interfaces were related to the electrical behavior of the structures. An improved rectification was associated with decreased generation-recombination currents at the ZnO/Tc interface due to an increased organic-inorganic interface energy gap. Current-voltage characteristics were analyzed by a differential approach. Electrical conduction mechanisms including bimolecular recombination as well as trap-filled limited conduction were identified in the investigated structures.
Keywords:Zinc oxide  Hybrid heterojunction  Atomic layer deposition  Electrical properties
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