Ga-doped ZnO as an electron transport layer for PffBT4T-2OD: PC70BM organic solar cells |
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| Affiliation: | 1. Plastic Electronics and Energy Laboratory (PEEL), Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India;2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305701, Republic of Korea;3. CSIR-National Physical Laboratory, New Delhi, 110012, India;1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea;2. School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea;3. Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, Republic of Korea;4. SKC Advanced Technology R&D Center, Suwon, Gyeonggi-do, 440-301, Republic of Korea;1. Institute of Mathematics and Physics, Central South University of Forestry & Technology, Changsha 410004, China;2. School of Physics and Electronics, Central South University, Changsha 410083, China;1. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China;2. Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Changsha 410081, China;1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea;2. Electronics and Telecommunications Research Institute, Daejeon, 34129, South Korea;1. IITB-Monash Research Academy, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;2. Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai 400076, India;3. Talga Technologies Ltd, Cambridge Science Park, Unit 15-17 Milton Road, Cambridge CB4 0FQ, United Kingdom;4. Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, VIC 3800, Australia;1. IITB-Monash Research Academy, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India;2. Department of Metallurgical Engineering and Materials Science, IIT Bombay, Mumbai 400076, India;3. Talga Technologies Ltd, 184 The Bradley Centre, Cambridge Science park, Milton Road, Cambridge CB4 0GA, UK;4. Department of Materials Science and Engineering, Monash University, Wellington Road, Clayton, VIC 3800, Australia |
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| Abstract: | Ga-doped ZnO(GZO) is investigated as an electron transport layer in organic solar cells based on a promising donor: acceptor system of poly(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)-alt-(3,3?-di(2-octyldode-cyl)-2,2′; 5′,2″; -5″,2?-quaterthio-phen-5,5?-diyl)] (PffBT4T-2OD):phenyl-C71-butyric acid methyl ester (PC70BM). With the inverted geometry having a configuration of ITO/GZO (40 nm)/PffBT4T-2OD:PC70BM (270 nm)/MoO3 (20 nm)/Al (100 nm), maximum power conversion efficiency (PCE) of 9.74% has been achieved, while it is limited at 8.72% for devices with undoped ZnO. Our study based on the structural, morphological, compositional, and electrical characterizations indicate that suggests enhanced device performance of the GZO-based devices resulted mainly from the improved electrical properties of Ga-ZnO thin films as compared to undoped ZnO. |
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| Keywords: | Organic solar cells Ga-doped ZnO Electron transport layers Hole blocking layer |
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