Controlled surface doping for operating stability enhancement in organic field-effect transistors |
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| Affiliation: | 1. Department of Chemistry, Fu Jen Catholic University, New Taipei City 24205, Taiwan;2. Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan;1. Engineering Research Centre of Zhengzhou for High Performance Organic Functional Materials, Zhongzhou University, 6 Yingcai Street, Huiji District, Zhengzhou, 450044, China;2. Key Laboratory of Synthetic and Self-Assembly Chemistry for Organic Functional Molecules, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, 345 Lingling Road, Shanghai, 200032, China;3. Department of Chemistry, Zhejiang Sci-Tech University, Hangzhou, 310018, China;4. Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, China;1. Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore;2. CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore;3. Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore;1. Department of Physics, Ajou University, Suwon 443-749, South Korea;2. Department of Energy Systems Research, Ajou University, Suwon 443-749, South Korea |
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| Abstract: | The introduction of an inorganic/organic or organic/organic heterojunction in the pentacene-based organic field-effect transistors is demonstrated to be in favor of improving their operating stability. The heterojunction-induced p-type doping of pentacene is nondestructive, and it can be controlled by varying the adlayer thickness. The bias stress effects are compared at similar surface carrier density for the doped and undoped devices, and the current flow in the pentacene bulk is found to be more stable than that in the conducting channel close to the gate dielectric. In the initial stage of the bias stress characteristics, the carrier trapping associated with the gate dielectric is mainly responsible for the current instability. On the other hand, in the prolonged stage, the carrier trapping in the active layer may become dominant. |
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| Keywords: | Organic field-effect transistors Surface doping Heterojunction Bias stress effect |
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