Direct writing of inkjet-printed short channel organic thin film transistors |
| |
| Affiliation: | 1. Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan;2. Electroplating Engineers of Japan Ltd., 5-50 Shinmachi, Hiratsuka, Kanagawa 254-0076, Japan;3. Toppan Forms Co., Ltd., 1-7-3 Higashi Shimbashi, Minato-ku, Tokyo 105-8311, Japan;4. Asahi Glass Co., Ltd., 1-5-1 Marunouchi, Chiyoda-ku, Tokyo 100-8405, Japan;5. Technology Research Institute of Osaka, 2-7-1 Ayumino, Izumi, Osaka 594-1157, Japan;1. National Inst. of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tukuba, Ibaraki, 305-8565, Japan;2. Ube Indus., 8-1 Minami-kaigan, Goi, Ichihara, Chiba, 290-0045, Japan;1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, USA;2. Department of Engineering, University of Perugia, Perugia, Italy;3. Kilby Labs, Texas Instruments, Dallas, USA;1. Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea;2. RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan;3. Department of Chemistry, Graduate School of Science, Tohoku University, 6-3, Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, 980-8578, Japan;4. Pohang Accelerator Laboratory, Pohang, 790-784, Republic of Korea |
| |
| Abstract: | A direct-writing fabrication process for fully inkjet-printed short-channel organic thin-film transistors (OTFTs) has been developed. Channels as narrow as 800 nm between two printed Ag electrodes were achieved by printing a special Ag ink on an SU-8 interlayer, which can be partially dissolved by the solvents used in the Ag ink. The ridge formed along the printed Ag line edges due to redistribution of the interlayer material during the drying process limits the ink spread, and separates neighboring printed lines, and is the key to defining an ultra-narrow channel for transistor fabrication. The short-channel OTFTs fabricated using this technique have demonstrated well-defined linear and saturation regimes. An extracted mobility of 0.27 cm2/Vs with an on/off ratio of 105 was obtained at a driving voltage of −12 V. The excellent performance of these devices demonstrates the potential of this technique in fabrication of short-channel devices using standard printing technologies. |
| |
| Keywords: | Printed electronics OTFTs Inkjet |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
