Controllable gas selectivity at room temperature based on Ph5T2-modified CuPc nanowire field-effect transistors |
| |
| Affiliation: | 1. Empa, Swiss Federal Institute for Materials Science and Technology, Laboratory for Functional Polymers, CH-8600, Dübendorf, Switzerland;2. Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, EPFL, Station 12, CH-1015, Lausanne, Switzerland;3. Zürich University of Applied Sciences, Institute of Chemistry and Biological Chemistry, Einsiedlerstrasse 31, CH-8820, Wädenswil, Switzerland;4. Empa, Swiss Federal Institute for Materials Science and Technology, Reliability Science and Technology, CH-8600, Dübendorf, Switzerland;5. Zürich University of Applied Sciences, Institute of Computational Physics, Technikumstrasse 9, CH-8401, Winterthur, Switzerland;6. Fluxim AG, Technoparkstrasse 2, 8406, Winterthur, Switzerland;1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 446-701, Republic of Korea;2. Department of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Shilim-9-Dong, Gwanak-Gu, Seoul 151-744, Republic of Korea;3. Interface Material and Chemical Engineering Research Center, Korea Research Institute of Chemical Technology, Daejeon 305-343, Republic of Korea;1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;3. Key Laboratory of UV Light Emitting Materials and Technology under Ministry of Education, Northeast Normal University, Changchun 130024, PR China |
| |
| Abstract: | A dinaphtho3,4-d:3′,4′-d′]benzo1,2-b:4,5-b′]dithiophene (Ph5T2)-modified copper phthalocyanine (CuPc) single crystal nanowire field-effect transistor (FET) with gas dielectric was fabricated as an organic gas sensor. This device exhibits the high response and the excellent controllable selectivity at room temperature. Its detection limit for NO2, NO, and H2S is down to sub-ppm level. Prior to surface modification, the CuPc nanowire FET shows the response as high as 1088% to 10 ppm H2S, but only 97.5% to 10 ppm NO2. After Ph5T2 modification, the response to 10 ppm H2S is decreased by one order of magnitude, but is dramatically improved up to 460% to 10 ppm NO2. The responses towards H2S and NO2 respectively for pristine and the modified sensor are higher than those of most reported organic sensors. The gas-sensing results reveal that Ph5T2 modification can transform the selectivity of the sensor from H2S to NO2. The controllable modulation of gas selectivity is related to the formed organic heterojunctions between CuPc and Ph5T2, where the hole carriers of CuPc nanowire are modulated by these heterojunctions, resulting in the changed adsorption behavior towards different gases. |
| |
| Keywords: | Surface modification Controllable selectivity Organic single crystal Field-effect transistor |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
