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| 热丝辅助MWECR-CVD法沉积氢化非晶硅薄膜研究 | |
| 引用本文： | 刘国汉,丁毅,朱秀红,何斌,陈光华,贺德衍. 热丝辅助MWECR-CVD法沉积氢化非晶硅薄膜研究[J]. 太阳能学报, 2006, 27(10): 986-989 |
| 作者姓名： | 刘国汉 丁毅 朱秀红 何斌 陈光华 贺德衍 |
| 作者单位： | 1. 兰州大学物理科学与技术学院,兰州,730000;甘肃省科学院传感技术研究所,兰州,730000 2. 兰州大学物理科学与技术学院,兰州,730000 3. 北京工业大学新型功能材料教育部重点实验室,北京,100022 4. 兰州大学物理科学与技术学院,兰州,730000;北京工业大学新型功能材料教育部重点实验室,北京,100022 |
| 基金项目： | 国家重点基础研究发展规划资助项目(G000028201)，甘肃省自然科学基金项目(3ZS051-A25-052) |
| 摘 要： | 为了降低a-Si:H薄膜中的氢含量,提高其稳定性,在我们MWECR-CVD系统中引入了热丝装置,热丝对等离子体的热辐射使等离子体升温,既促进了气体的进一步分解和电离,获得较多的低氢原子基团,也减少了活性高硅烷聚合物的生成,从而使薄膜中的(SiH2)n的含量降低。同时,热丝对样品表面提供的热辐射和光辐射也可以进一步降低薄膜的氢含量。实验结果表明,用这种装置沉积的a-Si:H薄膜,氢含量可降低到4.5at%左右,稳定性明显增强,光敏性也有一定改善。 |
| 关 键 词： | 电子回旋共振 等离子体增强化学气相沉积 氢化非晶硅薄膜 热丝 光致衰退效应 |
| 文章编号： | 0254-0096（2006）10-0986-04 |
| 收稿时间： | 2005-08-15 |
| 修稿时间： | 2005-08-15 |
INVESTIGATION OF DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILM WITH HW-MWECR-CVD SYSTEM |
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| Liu Guohan,Ding Yi,Zhu Xiuhong,He Bin,Chen Guanghua,He Deyan. INVESTIGATION OF DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILM WITH HW-MWECR-CVD SYSTEM[J]. Acta Energiae Solaris Sinica, 2006, 27(10): 986-989 | |
| Authors: | Liu Guohan Ding Yi Zhu Xiuhong He Bin Chen Guanghua He Deyan |
| Affiliation: | 1. School of Physics Science and Technology, lanzhou University, Lanzhou 730000, China ; 2. The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China ; 3. Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China |
| Abstract: | A novel MWECR-CVD system with hot wire assisted has been developed to decreased the hydrogen concentration of a-Si:H films and increased the stability.The main role of the hot wire is to increase the plasma temperature.promote the decomposition of reaction gas thereby to increase the low-hydrogen radicals and restrain the higher silicon reactive species which are critical to form(SiH2)n.The radiation from the hot wire also increases the temperature of growing surface of the films,which strengthens the activation of the surface and enhances the diffusion of hydrogen atoms,so that the hydrogen concentration is decreased and the microstructure of the a-Si:H films can be improved.The experiment results show that the hydrogen concentration of a-Si:H films by using this system can be reduced to about 4.5at%,and meanwhile,the stability is increased remarkably and the photosensitivity is improved. |
| Keywords: | MWECR-CVD a-Si:H Films hot wire light-induced degradation effect |
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