| 短沟道GaAs功率MESFET器件的二维有限差分数值模拟 |
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| 引用本文： | 徐晓莉,刘恩科.短沟道GaAs功率MESFET器件的二维有限差分数值模拟[J].固体电子学研究与进展,1988(3). |
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| 作者姓名： | 徐晓莉 刘恩科 |
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| 作者单位： | 南京工学院微电子中心
(徐晓莉)，西安交通大学(刘恩科) |
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| 摘 要： | 本文系统叙述了用于分析短沟道GaAs MESFET器件特性的二维稳态数值模拟通用软件。模拟中首次考虑了GaAs器件内部杂质的非均匀分布及短沟道效应,以使求解符合实际;为了加快模拟收敛速度及精度,采用改进的有限差分算法对短沟道GaAs MESFET功率器件进行了模拟计算,取得了与实验相一致的结果。本通用软件具有自动网格划分,自由格式输入及模块化结构等特点,可方便、准确地描述GaAs MESFET内部的物理图象,预测器件在不同偏置下的特性。
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Two-Dimensional Finite Differential Numerical Simulation on Short Channel Power GaAs MESFETs |
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| Abstract: | A two-dimensional simulator is developed to analyse the steady-state characteristics of short channel GaAs MESFET's. Non-uniform doping distribution and short channel effect are considered in the simulation program to achieve realistic results. Improved finite differential scheme,auto mesh partitioning and free format input feature of the simulator make the calculation faster and more accurate.Simulation results on lμm channel power GaAs MESFET agree very well with experiments. Physical behaviour and terminal characteristics of short channel GaAs MESFETs can be conveniently predicted fay this simulator. |
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