| Abstract: | A kinetic model of nonequilibrium chemical processes in gas mixtures of Si, O, H, and Ar and a model of the calculation of the main parameters of plasma facilities for the implementation of the plasma-chemical method of the direct preparation of silicon from quartz in argon–hydrogen gas-plasma flows have been formulated. The criteria and general conditions at which the maximal yield of silicon is achieved were determined. The main mode and construction parameters of plasma facilities were determined. It is shown that at the consumed electrical power of a stationary plasmatron of 100 kW the calculated efficiency of the facility (over vapor Si) could be on the order of 10–2 g/s. |
