Monolithic integration of InGaAs p-i-n photodetector with fullion-implanted InP JFET amplifier |
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| Authors: | Kim S.J. Guth G. Vella-Coleiro G.P. Seabury C.W. Sponsler W.A. Rhoades B.J. |
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| Affiliation: | AT&T Bell Lab., Murray Hill, NJ; |
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| Abstract: | A monolithically integrated p-i-n FET amplifier, fabricated using ion-planted indium-phosphide (InP) JFETs, is described. The vertically integrated structure consists of a vapor-phase epitaxy (VPE)-grown InGaAs photoabsorption layer and a metal-organic-chemical-vapor-disposition (MOCVD)-grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETS were used to form the integrated amplifier with a symmetrical design to remove the DC offset. With a receiver sensitivity of -36.4 dBm measured at 200 Mb/s NRZ for 10-9 BER, it is thought to be the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dB |
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