A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation

The effect of stimulating synthesis reactions for the Si₃N₄ phase in nitrogen-enriched silicon layers under the influence of argon-ion implantation into the rear side of silicon wafers was investigated. Dependences of variations in the IR absorption and the resistivity of the synthesized layers on argon-implantation dose were obtained. The morphology of a wafer surface after argon implantation with various doses was investigated by atomic-force microscopy. The effect is attributed to the action of shock waves arising owing to microbursts of argon blisters.