A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation |
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Authors: | E. S. Demidov V. V. Karzanov D. A. Lobanov K. A. Markov V. V. Sdobnyakov |
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Affiliation: | (1) Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603600, Russia |
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Abstract: | The effect of stimulating synthesis reactions for the Si3N4 phase in nitrogen-enriched silicon layers under the influence of argon-ion implantation into the rear side of silicon wafers was investigated. Dependences of variations in the IR absorption and the resistivity of the synthesized layers on argon-implantation dose were obtained. The morphology of a wafer surface after argon implantation with various doses was investigated by atomic-force microscopy. The effect is attributed to the action of shock waves arising owing to microbursts of argon blisters. |
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