| X波段MEMS可变电容的设计与制作 |
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| 引用本文： | 李倩,胡小东,李丽. X波段MEMS可变电容的设计与制作[J]. 微纳电子技术, 2008, 45(6): 347-351 |
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| 作者姓名： | 李倩 胡小东 李丽 |
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| 作者单位： | 中国电子科技集团公司,第十三研究所,石家庄,050051 |
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| 摘 要： | 对一种适合于X波段通信系统的RF MEMS可变电容进行了结构设计和工艺实现。该电容用高阻硅作为衬底材料,采用凹形和T形梁结构,整个结构由金材料组成;静电驱动,采用驱动信号与微波信号分离的方法。用有限元分析软件Ansys对该电容进行了模拟,随着驱动电压的变化,电容上极板产生位移变化,电容值相应地发生变化;设计了相应的工艺流程,实现了X波段MEMS可变电容的工艺制作和测试,该工艺与集成电路工艺兼容。S参数测试结果表明,在9GHz时Q值可达32.5,电容调节范围为28.8%。
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| 关 键 词： | 可变电容 压控振荡器 Q值 静电力 射频微机电系统 |
Design and Realization of X-Band MEMS Variable Capacitor |
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| Li Qian,Hu Xiaodong,Li Li. Design and Realization of X-Band MEMS Variable Capacitor[J]. Micronanoelectronic Technology, 2008, 45(6): 347-351 |
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| Authors: | Li Qian Hu Xiaodong Li Li |
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| Affiliation: | Li Qian,Hu Xiaodong,Li Li(The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | An X-band RF MEMS variable capacitor was presented.The capacitor was composed of four novel T shape beams linked with a large concave plate.The capacitor was fabricated on the high resistance Si substrate,and the structure was made of Au.Actuation signals were separated from microwave signals.The capacitor was simulated with Ansys which is a finite element analysis software.The spacing between two parallel plates was changed by electrostatic actuation applied voltage so that the capacitor could be tuned.The... |
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| Keywords: | variable capacitor VCO quality factor electrostatic force RF MEMS |
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