极紫外光刻光源

分析了极紫外光刻技术作为下一代光刻技术的首选技术目前飞速发展阶段的状况,表明欧、美、日、俄等国家和地区在该领域集中了大量的人力、物力的目标是将光刻精度提高到50nm.指出了极紫外光源是极紫外光刻的核心设备,目前的主要研究方向是提高能量转换效率和输出功率,提高系统各部分的寿命,降低成本等.

Extreme Ultraviolet Lithography Source

The status of extreme ultraviolet lithography (EUVL),as the technology for nextgeneration lithography (NGL), in a rapidly developing stage is analyzed. The aim in this research areathat many researchers and projects focused on in some countries and districts, such as the US,Europe, Japan, Russian, to improve the resolution of lithography to 50 nm is illustrated. It is pointedout that EUV source is a core device of EUVL, now the main research work is to improve the energyconversion efficiency and output power, to lengthen the lifetime of the components of the source,and to reduce the costs.