氧化物薄膜抑制量子点的光衰性能

量子点应用于LED中,可获得高饱和性、宽色域光源,在液晶显示背光源领域前景广阔。但是,影响量子点寿命的因素很多,如温度、水氧等,严重阻碍了其推广应用。目前,水氧对量子点光衰性能影响的研究较少,本文旨在研究无机氧化物薄膜阻隔层对量子点光衰性能的影响。量子点成膜后表面溅射Al2O3、SiO2水氧隔离薄膜,蓝光LED激发绿光量子点,研究其光衰性能。结果表明,与无隔离膜的样品相比,单层SiO2薄膜的样品光衰性能有所改善;双层的SiO2薄膜及SiO2/Al2O3复合薄膜,可以有效地减小薄膜孔洞大小和孔洞密度,阻隔水氧的进入,抑制量子点的光衰减,提高量子点寿命。

The Optical Attenuation of Quantum Dots Inhibited by Oxide Films

The application of quantum dots in LED can obtain a light source with high saturation and wide color gamut,which has a very attractive prospect in the backlight field of liquid crystal display.However,the short lifetime of quantum dots is affected by many factors,such as temperature,water and oxygen,which seriously affects its popularization and application.At present,there are few studies on the effect of water and oxygen on the photo-damage performance of quantum dots.The purpose of this paper is to study the effect of inorganic oxide thin film barrier layer on the photodegradation performance of quantum dots.After the formation of quantum dot film,the Al2O3 and SiO2 thin films are covered,we mainly study the optical decay properties of green quantum dot films excited by blue LED.The results showed that the photo-decay performance of the monolayer SiO2 film samples was improved compared with the film-free samples;The double-layer SiO2 film and the composite film of SiO2 and Al2O3 can effectively reduce the pore size and pore density of the film,decrease the entry of water and oxygen,reduce the light attenuation of quantum dots and increase lifetime of quantum dot.