A method for analysis and profiling of boron,carbon and oxygen impurities in semiconductor wafers by recoil atoms in heavy ion beams |
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| Authors: | M Petrascu I Berceanu I Brancus A Buta M Duma C Grama I Lazar I Mihai M Petrovici V Simion M Mihaila I Ghita |
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| Affiliation: | Institute of Physics and Nuclear Engineering, P.O. Box MG-6 Magurele-Bucharest, Romania;Central Research Institute of Electronics, Baneasa-Bucharest, Romania;Factory for Radio and Semiconductor Components, Baneasa-Bucharest, Romania |
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| Abstract: | A method based on identification of recoil atoms in heavy ion beams, by using a (ΔE, E) measuring system, is described. The two parameter (ΔE, E) spectra, obtained with the aid of a computer, shows a good separation between carbon and oxygen recoils originating from a 300 μ;m thick silicon wafer bombarded with a 70 MeV sulphur beam. Profiling depths 10–20 μm and sensitivities close to 1016 atoms/cm are estimated. |
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