Partial SOI type isolation for improvement of DRAM cell transistor characteristics |
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| Authors: | Myoung Jin Lee Jun Hee Cho Sang Don Lee Jin Hong Ahn Jin Woong Kim Sung Wook Park Park Y.J. Hong Shick Min |
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| Affiliation: | Sch. of Electr. Eng., Seoul Nat. Univ., South Korea; |
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| Abstract: | A new DRAM cell transistor using an isotropic etching under the storage node is proposed, and it is shown that the structure gives improvement both in the short-channel effect and in the body-bias control. The asymmetrical characteristics of the structure are analyzed by experiments and simulation, and the feasibility of utilizing the asymmetric characteristics is reported. |
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