Growth and properties of single-phase γ-In2Se3 thin films on (1 1 1) Si substrate by AP-MOCVD using H2Se precursor |
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| Authors: | DY Lyu TY Lin JH Lin SC Tseng JS Hwang HP Chiang CC Chiang SM Lan |
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| Affiliation: | aInstitute of Optoelectronic Sciences, National Taiwan Ocean University, No. 2, Beining Road, Keelung 202-24, Tawian, ROC;bInstitute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan, ROC |
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| Abstract: | A set of In2Se3 films was grown on (1 1 1) Si substrate with AlN buffer by metalorganic chemical vapor deposition (MOCVD) using H2Se as the metalogramic precursors for Se. The In2Se3 films on (1 1 1) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase γ-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra of single-phase γ-In2Se3 show exciton emissions at 2.140 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.943 eV. |
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| Keywords: | InSe MOCVD Photoluminescence |
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