Observation of velocity overshoot in silicon inversion layers |
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Authors: | Assaderaghi F. Kop P.K. Hu C. |
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Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
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Abstract: | Employing a test structure, velocity overshoot in silicon inversion layers is observed at room temperature. For channel lengths longer than 0.3 μm, the velocity/field relation follows the well-known behavior with no channel length dependence. The first indication of velocity overshoot is seen at a channel length of 0.22 μm, while at L=0.12 μm, drift velocities up to 35% larger than the long-channel value are measured |
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