| 硫化矿浸出过程的半导体-溶液界面分析 |
| |
| 引用本文： | 李宏煦,王淀佐. 硫化矿浸出过程的半导体-溶液界面分析[J]. 有色金属, 2004, 56(2): 77-80 |
| |
| 作者姓名： | 李宏煦 王淀佐 |
| |
| 作者单位： | 北京有色金属研究总院,北京,100088 |
| |
| 基金项目： | 国家自然科学基金资助项目(50204001) |
| |
| 摘 要： | 硫化矿氧化浸出过程实际是半导体 -溶液界面电子或空穴转移的过程 ,基于传统半导体界面氧化理论 ,根据硫化矿半导体表面能级与溶液氧化还原对的关系 ,系统分析硫化矿 -溶液界面电子或空穴转移步骤 ,揭示了硫化矿在氧化溶液介质中的氧化浸出机理。
|
| 关 键 词： | 冶金物理化学 硫化矿 半导体溶液界面 浸出 氧化机理 电化学 |
| 文章编号： | 1001-0211(2004)02-0077-04 |
| 修稿时间： | 2003-11-03 |
Semiconductor/Solution Interface of Sulfide Leaching Process |
| |
| LI Hong-xu,WANG Dian-zuo. Semiconductor/Solution Interface of Sulfide Leaching Process[J]. Nonferrous Metals, 2004, 56(2): 77-80 |
| |
| Authors: | LI Hong-xu WANG Dian-zuo |
| |
| Abstract: | The sulfide leaching process is actually electrons and holes transferring on semiconductor/solution interface. On the fundament of traditional theory on semiconductor interface, the steps of electrons and holes transferring within interface of the semiconductor/solution are systemically analyzed and the sulfide leaching mechanism in oxidative media is expressed by means of the relationship of the band energy of sulfides and leaching medium solutions. |
| |
| Keywords: | physical chemistry of process metallurgy sulfide semiconductor/solution interface leaching oxidation mechanism electrochemistry |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
