High-field-induced leakage in ultrathin N2O oxides |
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| Authors: | Yoon G.W. Joshi A.B. Kim J. Kwong D.-L. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
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| Abstract: | Stress-induced leakage current (SILC) is studied in ultrathin (~50 Å) gate oxides grown in N2O or O2 ambient, using rapid thermal processing (N2O oxide or control oxide, respectively). MOS capacitors with N2O oxides exhibit much suppressed SILC compared to the control oxide for successive ramp-up, constant voltage DC, and AC (bipolar and unipolar) stresses. The mechanism for SILC is discussed, and the suppressed SILC in N2O oxide is attributed to suppressed interface state generation due to nitrogen incorporation at the Si/SUO2 interface during N2O oxidation |
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