电化学组装一维纳米线阵列p型Bi2Te3温差电材料

：对p型Bi2Te3温差电材料的电沉积过程进行了研究，分析了添加剂对电沉积过程的影响．在此基础上，以孔径为50nm的阳极氧化铝多孔膜为模板，采用直流电沉积技术，在氧化铝多孔模板的纳米级微孔内电化学组装出了P型Bi2Te3纳米线阵列温差电材料，性能研究表明，p型Bi2Te3纳米线阵列的温差电性能远远超过具有相同组成的块状温差电材料。

Electrochemical Assembled p-type Bi2Te3 Thermoelectric Materials with Nanowire Array Structure

The electrodeposition process of p-type Bi_2Te_3 thermoelectric materials in the solution containing Bi~(+3) and HTeO_2~(+1) was investigated. During the electrodeposition prosess, Bi~(+3) can promote the reduction of HTeO_2~(+1). The addition of glycerin in the electrodepositing solution can decrease the solving rate of alumina templates in the solution, but glycerin also decreases the electrodeposition rate remarkably. The p-type Bi_2Te_3 thermoelectric materials with nanowire array structure were electrochemically assembled into the nano-pores of the alumina template. The performance measurements show that the Seebeck coefficient a of the nanowire array is much higher than that of the bulk thermoelectric materials with the same composition.