| ZnO压敏电阻器的性能及发展 |
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| 引用本文： | 傅静,徐政. ZnO压敏电阻器的性能及发展[J]. 现代技术陶瓷, 2004, 25(1): 31-36 |
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| 作者姓名： | 傅静 徐政 |
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| 作者单位： | 同济大学材料科学与工程学院,上海,200092 |
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| 摘 要： | 简要回顾了ZnO压敏电阻器的历史，阐述了ZnO压敏电阻器的性能以及当前基础性研究的现状，并对其发展进行了展望。研究了Bi2O3和TiO2的掺杂对低压ZnO压敏电阻性能和微观结构的影响规律，从理论上分析了Bi2O3和TiO2添加剂的作用机理。为ZnO压敏电阻的低压化提供了理论依据和方法。
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| 关 键 词： | ZnO压敏电阻器 微观结构 电阻性能 添加剂 晶粒生长 TiO2 物理性能 陶瓷材料 |
Study on Properties of Low-Voltage ZnO Varistor and Its Development |
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| Fu Jing Xu Zheng. Study on Properties of Low-Voltage ZnO Varistor and Its Development[J]. Advanced Ceramics, 2004, 25(1): 31-36 |
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| Authors: | Fu Jing Xu Zheng |
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| Abstract: | In this paper,the history,properties and the recent technological status of ZnO varistor were reviewed and its development was discussed at the same time.After the two additives are classified by their functions,the effecting mechanism of Bi_2O_3 and TiO_2 additives were studied theoretically.It provided an effective method and rational basis for studying low-voltage ZnO varistor. |
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| Keywords: | ZnO varistor property development additive Bi_2O_3 TiO_2 grain growth |
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