Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport |
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Authors: | Seoyong Ha Noel T Nuhfer Gregory S Rohrer Marc de Graef Marek Skowronski |
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Affiliation: | (1) Department of Materials Science & Engineering, Carnegie Mellon University, 5000 Forbes Avenue, 15213 Pittsburgh, Pennsylvania, USA |
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Abstract: | Transmission electron microscopy (TEM) and KOH etching have been used to study the dislocation structure of 4H SiC wafers
grown by physical vapor transport. A new type of threading dislocation arrays was observed. Rows of etch pits corresponding
to dislocation arrays were observed in vicinity of micropipes, misoriented grains and polytypic inclusions at the periphery
of the boules and extended along the
directions. Plan view conventional and high resolution TEM showed that the arrays consisted of dislocations threading along
the c-axis with Burgers vectors having edge components of the a/3
type. The Burgers vectors were parallel to the corresponding arrays. The dislocation arrays were interpreted as slip bands
formed by dislocation glide in the prismatic slip system
of hexagonal SiC during post-growth cooling. |
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Keywords: | Silicon carbide bulk crystal growth physical vapor transport threading dislocation prismatic slip |
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