Laser THz emission microscope as a novel tool for LSI failure analysis |
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Authors: | Masatsugu Yamashita Chiko Otani Sunmi Kim Hironaru Murakami Masayoshi Tonouchi Toru Matsumoto Yoshihiro Midoh Katsuyoshi Miura Koji Nakamae Kiyoshi Nikawa |
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Affiliation: | 1. Institute of Fluid Flow Machinery, Polish Academy of Sciences, Fiszera 14 Str., 80–231 Gdansk, Poland;2. Rzeszow University of Technology, Powstancow Warszawy 12 Str., 35-959 Rzeszow, Poland |
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Abstract: | We have proposed and developed a novel technique for a non-contact inspection of defective interconnections in an LSI chip using a laser terahertz emission microscope (LTEM). The LTEM measures the THz emission images of an LSI chip by scanning it with fs laser pulses. When a fs laser pulse irradiates a p–n junction in an LSI chip, transient photocurrent flows into interconnections resulting in the emission of the THz pulse into free space. We investigated the characteristics of the THz emissions from simple test element group samples which consist of p–n junctions connected to metal lines. It was found that the metallic lines connected to photo-excited p–n junctions worked as THz emission antennae which enhance the emission efficiency of THz pulses near their resonant frequencies corresponding to the line lengths. This result indicates that THz emission signals from p–n junctions in circuits strongly depend on the structure of the interconnections. We show the successful results on the inspection of defective interconnections in MOSFET devices and C7552 ISCAS’85 benchmark circuits using LTEM. By comparing the THz emission images between a normal circuit and a defective one, it is possible to identify the p–n junctions connected to the defective interconnections without electrical contacts. |
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